Orum Material Develops Ultrafine Test Socket to Boost HBM Yields
Orum Material announced on March 19, 2026, that it has developed an ultrafine test socket capable of probing micro-bumps on HBM DRAM dies—the first in the industry. The technology was presented at TestConX 2026 in Mesa, Arizona.
The Technical Challenge:
HBM is built by vertically stacking 8 to 12 DRAM dies interconnected through micro-bumps. In current HBM4 designs, bump pitch is approximately 65 micrometers (μm) with more than 16,000 bumps per die. Conventional pogo pins (300 μm+ pitch) and rubber pins (250 μm+ pitch) cannot physically contact HBM micro-bumps.
Innovation:
Orum’s solution leverages three-dimensional MEMS technology with horizontally oriented cantilever pins. Key specifications:
Positional accuracy: ±1.0 μm (~30× more precise than pogo pins, ~50× more precise than rubber pins)
Cantilever thickness: 30-40 μm (~1/10th of rubber pins)
Contact force: 0.3 gram-force (minimizes bump damage risk)
Cycle life: 5,000+ contact cycles
The company adapted this capability from producing fine metal masks for OLED displays, extending precision electroplating and Invar expertise into semiconductor test sockets .
Choi Woo-seok, Executive Vice President at Orum Material, stated: "The ultrafine test socket and probe card market is just beginning to see explosive growth. Starting from FMM, we aim to become a first mover in the rapidly expanding AI semiconductor testing market."
